IXTN660N04T4
￥229.39
MOSFET N-CH 40V 660A SOT227B
| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 660A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 0.85mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 860 nC @ 10 V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 44000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package/ Case | SOT-227-4, miniBLOC |
新聞資訊
Littelfuse 單 FET、MOSFET 產(chǎn)品 IXTN660N04T4
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