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RV1C002UNT2CL

¥2.88
單 FET、MOSFET

MOSFET N-CH 20V 150MA VML0806

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs2Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id1V @ 100μA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds12 pF @ 10 V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVML0806
Package/ Case3-SMD, No Lead

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RV1C002UNT2CL

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