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RJU002N06T106

¥3.46
單 FET、MOSFET

MOSFET N-CH 60V 200MA UMT3

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs2.3Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds18 pF @ 10 V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUMT3
Package/ CaseSC-70, SOT-323

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RJU002N06T106

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