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RSU002P03T106

¥3.31
單 FET、MOSFET

MOSFET P-CH 30V 250MA UMT3

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 10 V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUMT3
Package/ CaseSC-70, SOT-323

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