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RQ5P010SNTL

¥4.75
單 FET、MOSFET

MOSFET N-CH 100V 1A TSMT3

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs520mOhm @ 1A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT3
Package/ CaseSC-96

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