RF4E100AJTCR
￥6.26
MOSFET N-CH 30V 10A HUML2020L8
| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | HUML2020L8 |
| Package/ Case | 8-PowerUDFN |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RF4E100AJTCR
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