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RJP020N06T100

¥6.55
單 FET、MOSFET

MOSFET N-CH 60V 2A MPT3

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMPT3
Package/ CaseTO-243AA

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RJP020N06T100

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