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RUR040N02TL

¥4.90
單 FET、MOSFET

MOSFET N-CH 20V 4A TSMT3

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT3
Package/ CaseSC-96

新聞資訊

ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RUR040N02TL

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