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SH8M24GZETB

¥9.50
FET、MOSFET 陣列

4V DRIVE NCH+PCH MOSFET. COMPLEX

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)45V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9.6nC @ 5V, 18.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 10V, 1700pF @ 10V
Power - Max1.4W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SH8M24GZETB

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