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VT6M1T2CR

¥2.95
FET、MOSFET 陣列

MOSFET N/P-CH 20V 0.1A VMT6

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C100mA
Rds On (Max) @ Id, Vgs3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id1V @ 100μA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds7.1pF @ 10V
Power - Max120mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-SMD, Flat Leads
Supplier Device PackageVMT6

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 VT6M1T2CR

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