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EM6M1T2R

¥3.82
FET、MOSFET 陣列

MOSFET N/P-CH 30V/20V EMT6

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25°C100mA, 200mA
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds13pF @ 5V
Power - Max150mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageEMT6

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 EM6M1T2R

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