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HP8MA2TB1

¥13.32
FET、MOSFET 陣列

HP8MA2 IS LOW ON-RESISTANCE AND

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 15A (Ta)
Rds On (Max) @ Id, Vgs9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V, 1250pF @ 15V
Power - Max3W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-HSOP

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 HP8MA2TB1

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