| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.17A |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 840mW |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
新聞資訊
Texas Instruments FET、MOSFET 陣列 產(chǎn)品 TPS1120DR
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