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SH8M31GZETB

¥13.97
FET、MOSFET 陣列

SH8M31 IS A POWER MOSFET WITH LO

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7nC @ 5V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 10V, 2500pF @ 10V
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

新聞資訊

ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SH8M31GZETB

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