| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 182mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 31000pF @ 10V |
| Power - Max | 2450W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | Module |
| Supplier Device Package | Module |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 BSM600D12P3G001
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