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QS6K1FRATR

¥4.32
FET、MOSFET 陣列

2.5V DRIVE NCH+NCH MOSFET (CORRE

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds77pF @ 10V
Power - Max900mW (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Package/ CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSMT6 (SC-95)

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QS6K1FRATR

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