| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A, 1.3A |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Power - Max | 1W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-SMD, Flat Leads |
| Supplier Device Package | TUMT6 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 US6M11TR
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