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QH8MB5TCR

¥6.98
FET、MOSFET 陣列

40V 4.5A/5.0A, DUAL NCH+PCH, TSM

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 10V, 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 20V, 920pF @ 20V
Power - Max1.1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QH8MB5TCR

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