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QH8MC5TCR

¥6.55
FET、MOSFET 陣列

60V 3.0A/3.5A, DUAL NCH+PCH, TSM

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.1nC @ 10V, 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds135pF @ 30V, 850pF @ 30V
Power - Max1.1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QH8MC5TCR

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