| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V, 19.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 15V, 890pF @ 15V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SH8MA4TB1
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