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SH8MB5TB1

¥12.02
FET、MOSFET 陣列

40V DUAL NCH+PCH, SOP8, POWER MO

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta)
Rds On (Max) @ Id, Vgs19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 20V, 51nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 20V, 2870pF @ 20V
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

新聞資訊

ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SH8MB5TB1

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