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QH8MA4TCR

¥6.48
FET、MOSFET 陣列

MOSFET N/P-CH 30V TSMT8

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A, 8A
Rds On (Max) @ Id, Vgs16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 15V
Power - Max1.5W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QH8MA4TCR

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