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UT6K30TCR

¥8.71
FET、MOSFET 陣列

UT6K30 IS LOW ON - RESISTANCE AN

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs153mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.7V @ 50μA
Gate Charge (Qg) (Max) @ Vgs2.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds110pF @ 30V
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-PowerUDFN
Supplier Device PackageHUML2020L8

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 UT6K30TCR

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