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QS8M13TCR

¥0.00
FET、MOSFET 陣列

MOSFET N/P-CH 30V 6A/5A TSMT8

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A, 5A
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds390pF @ 10V
Power - Max1.5W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QS8M13TCR

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