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EMG11T2R

¥2.74

TRANS 2NPN PREBIAS 0.15W EMT5

參數(shù)名稱參數(shù)值
Product StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package/ Case6-SMD (5 Leads), Flat Lead
Supplier Device PackageEMT5

新聞資訊

ROHM Semiconductor 雙極晶體管陣列,預(yù)偏置 產(chǎn)品 EMG11T2R

作為ROHM Semiconductor優(yōu)質(zhì)且資深的代理服務(wù)商,深圳凌創(chuàng)輝電子有限公司在為您采購EMG11T2R時,能夠保證原裝進(jìn)口的品質(zhì)保障以外,價格也是業(yè)界最優(yōu)的,找我們買EMG11T2R絕對的現(xiàn)貨正品,需要報價和咨詢請您隨時聯(lián)系我們,同時我們?yōu)榉奖隳私釫MG11T2R產(chǎn)品詳情,我們提供了pdf在線觀看參數(shù)資料,助您輕松采購。

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