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EMD29T2R

¥3.24

TRANS NPN/PNP PREBIAS 0.12W EMT6

參數(shù)名稱參數(shù)值
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Resistor - Base (R1)1kOhms, 10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V/ 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA/ 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz, 260MHz
Power - Max120mW
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageEMT6

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ROHM Semiconductor 雙極晶體管陣列,預(yù)偏置 產(chǎn)品 EMD29T2R

作為ROHM Semiconductor優(yōu)質(zhì)且資深的代理服務(wù)商,深圳凌創(chuàng)輝電子有限公司在為您采購EMD29T2R時,能夠保證原裝進(jìn)口的品質(zhì)保障以外,價格也是業(yè)界最優(yōu)的,找我們買EMD29T2R絕對的現(xiàn)貨正品,需要報價和咨詢請您隨時聯(lián)系我們,同時我們?yōu)榉奖隳私釫MD29T2R產(chǎn)品詳情,我們提供了pdf在線觀看參數(shù)資料,助您輕松采購。

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