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RAQ045P01TCR

¥3.46
單 FET、MOSFET

MOSFET P-CH 12V 4.5A TSMT6

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Vgs (Max)-8V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 6 V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT6 (SC-95)
Package/ CaseSOT-23-6 Thin, TSOT-23-6

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